C3M0032120J1-TR

$30.06

Description：SIC, MOSFET, 32M, 1200V, TO-263-
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1de406c8c94d Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 32M, 1200V, TO-263-
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 41.4A, 15V
Vgs(th) (Max) @ Id：3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：3424 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：277W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0032120J1-TR

Overview

The C3M0032120J1 is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, housed in a TO-263-7L XL package. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 32mΩ at 25°C. The device supports a continuous drain current of 68A and a pulsed current of 120A. Key electrical parameters include a gate charge of 111nC and an output capacitance stored energy of 72µJ. Thermal resistance from junction to case is 0.45°C/W, with an operating junction temperature range up to +175°C.

Feature Summary

Optimized package design incorporating a separate Kelvin driver source pin to minimize switching noise and reduce gate ringing.
Third-generation SiC technology providing high blocking voltage combined with low on-resistance for enhanced efficiency.
Fast intrinsic body diode characterized by low reverse recovery charge and peak current.
High-speed switching capabilities enabled by low input, output, and reverse transfer capacitances.

Applications

Solar inverters
Electric vehicle motor drives
High voltage DC/DC converters
Switched mode power supplies

Procurement Notes

Verify the specific ordering suffix J1 corresponds to the TO-263-7L XL package variant when sourcing. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring high voltage handling and efficient power conversion. The separate driver source pin is critical for minimizing parasitic inductance in high-frequency switching circuits. Evaluate thermal performance based on the provided derating curves for continuous and pulsed current operations within the specified temperature limits.

Part Context

This device belongs to the C3M family of Silicon Carbide Power MOSFETs manufactured by Wolfspeed. It represents an evolution in SiC technology, offering improved packaging and electrical characteristics compared to previous generations. The product line targets high-efficiency power systems where reduced cooling requirements and increased power density are essential design goals.

Replacement Considerations

Cross-reference with other C3M series devices such as C3M0021120D or C3M0016120D if lower on-resistance is required, noting differences in current ratings and package types. Verify compatibility with existing PCB footprints and thermal interfaces when substituting components within the same family.

FAQ

What is the purpose of the separate driver source pin?

The separate Kelvin driver source pin isolates the gate drive circuit from the high-current power source path, reducing switching noise and minimizing gate ringing during operation.