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Product Detailed Parameters
- Description：SIC, MOSFET 45M, 650V TO-263-7XL
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 4.84mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1621 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed C3M0045065J1-TR is a third-generation silicon carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration. It operates with a 650 V drain-source voltage and delivers a continuous drain current of 47 A at 25°C case temperature. The device exhibits a maximum on-resistance of 60 mΩ at 150°C. Packaged in a TO-263-7L XL format, it supports junction temperatures up to 175°C and includes a separate Kelvin source pin for optimized gate drive performance.
Feature Summary
- Third-generation SiC technology providing high blocking voltage combined with low on-resistance
- Optimized package design incorporating a separate driver source pin to minimize gate ringing
- Fast intrinsic body diode characterized by low reverse recovery charge
- High-speed switching capabilities supported by low internal capacitances
Applications
- Datacenter and telecom power supplies
- EV battery chargers
- High voltage DC/DC converters
- Energy storage systems
- Solar inverters
Procurement Notes
Verify the specific ordering suffix '-TR' to confirm tape-and-reel packaging requirements against standard tube configurations. Ensure compatibility with the TO-263-7L XL footprint dimensions provided in the datasheet. Confirm RoHS compliance status and REACH SVHC declarations prior to integration into final assemblies.
Selection Notes
Select this component for designs requiring high efficiency and reduced cooling loads due to low switching losses. The separate Kelvin source pin facilitates precise gate control, minimizing parasitic oscillations. Evaluate thermal resistance values against system heat dissipation capabilities to ensure operation within the specified 175°C junction temperature limit.
Part Context
This discrete power transistor belongs to the C3M family of silicon carbide devices manufactured by Wolfspeed. It represents the company's third-generation SiC MOSFET technology, designed to replace traditional silicon counterparts in high-frequency power conversion applications where superior thermal and electrical performance is required.
Replacement Considerations
Cross-reference with other C3M0045065 variants such as C3M0045065K or C3M0045065D if different packaging formats like TO-247-4 are needed. Verify that alternative packages maintain equivalent thermal and electrical characteristics for direct substitution.
