C3M0045065J1

Overview

The C3M0045065J1 is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7L XL. It features an N-channel enhancement mode configuration with a 650 V drain-source voltage rating and a maximum gate-source voltage of +19 V. The device exhibits a typical on-resistance of 45 mΩ at 25°C and supports a continuous drain current of 47 A. Key electrical parameters include a total gate charge of 61 nC, input capacitance of 1621 pF, and reverse recovery charge of 206 nC. Thermal characteristics specify a junction-to-case resistance of 0.85 °C/W, with an operating temperature range spanning -40°C to +175°C.

Feature Summary

• Third-generation SiC MOSFET technology optimized for high-speed switching and low parasitic capacitances.
• Integrated Kelvin source pin design to minimize gate ringing and reduce switching losses.
• Fast intrinsic body diode characterized by low reverse recovery charge and peak current.
• Halogen-free and RoHS compliant construction suitable for industrial thermal environments.

Applications

• Datacenter and telecom power supplies
• Electric vehicle battery chargers
• High voltage DC/DC converters
• Energy storage systems
• Solar inverters

Procurement Notes

Verify the specific package variant matches the required PCB footprint, as the J1 suffix denotes the TO-263-7L XL form factor. Confirm compliance documentation availability for REACh SVHC status prior to integration. Ensure the ordering part number aligns with the intended manufacturing revision, as datasheet updates may occur without immediate notification. Validate that the selected component meets all applicable safety standards for the target end-use environment.

Selection Notes

Select this component when system efficiency requires minimizing both conduction and switching losses in hard-switching topologies. The separate driver source pin facilitates precise control over turn-on transients, reducing electromagnetic interference. Consider the thermal resistance and safe operating area curves for heat sink sizing under varying duty cycles. Evaluate the gate charge requirements against available driver capabilities to optimize switching frequency performance.

Part Context

This discrete MOSFET belongs to the C3M series of silicon carbide power devices manufactured by Wolfspeed. It represents the company's third-generation technology platform, designed to replace traditional silicon counterparts in high-voltage applications. The product line focuses on enhancing power density and reducing overall system weight through superior material properties and optimized packaging solutions.

Replacement Considerations

Direct cross-references are not explicitly documented in the provided datasheet. Designers should evaluate alternative Wolfspeed models within the same 650 V generation family based on matching RDS(on) and package dimensions. Verify pinout compatibility and thermal characteristics before substituting components in existing layouts.

FAQ

What is the function of the separate source pins in the TO-263-7L XL package?

The package includes dedicated Kelvin source pins (Pin 2) separated from the main power source tabs. This design allows the gate driver to sense the source potential directly at the die, minimizing the impact of stray inductance in the power path and reducing gate voltage ringing during switching transitions.

How does the internal body diode perform during reverse recovery?

The intrinsic diode exhibits fast reverse recovery characteristics with a typical reverse recovery charge (Qrr) of 206 nC at 25°C. This low charge minimizes energy loss during the dead-time intervals in bridge configurations, contributing to higher overall system efficiency.