C3M0045065K

$17.36

Description：GEN 3 650V 49A SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:ad56e0b0b502 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：GEN 3 650V 49A SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id：3.6V @ 4.84mA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1621 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：176W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0045065K

Overview

The C3M0045065K is a Silicon Carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology in a TO-247-4 package. It features an N-channel enhancement mode configuration with a drain-source voltage of 650 V and a maximum on-resistance of 60 mΩ at 25°C. The device supports a continuous drain current of 49 A and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a gate charge of 63 nC, turn-on delay time of 9 ns, rise time of 12 ns, turn-off delay time of 18 ns, and fall time of 6 ns.

Feature Summary

Optimized package design incorporating a separate driver source pin to minimize switching losses and reduce gate ringing.
High blocking voltage combined with low on-resistance for improved system efficiency.
Fast intrinsic diode characterized by ultra-low reverse recovery charge.
Halogen-free and RoHS compliant construction.

Applications

EV chargers
Server & Telecom PSU
UPS
Solar inverters
SMPS

Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before procurement, as documentation updates may occur without notice. Confirm that the TO-247-4 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions accommodate the specified power dissipation limits at your target operating case temperatures. Check compliance declarations such as RoHS and REACH status if required by your supply chain regulations.

Selection Notes

Select this component when high-frequency operation and reduced cooling requirements are necessary. The separate driver source pin facilitates precise gate control, making it suitable for topologies sensitive to parasitic inductance. Consider the thermal resistance characteristics and safe operating area curves to ensure reliable performance under varying load conditions and ambient temperatures.

Part Context

This discrete SiC MOSFET belongs to the C3M product line, representing Wolfspeed's silicon carbide technology. It is designed for industrial applications requiring robust power conversion capabilities. The component is distinct from module configurations, offering a standalone solution for integration into various power electronic circuits.

Replacement Considerations

Consult official substitution guides or contact Wolfspeed directly for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous validation of electrical and thermal parameters.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin (Pin 3) is optimized to minimize switching losses and reduce gate ringing by providing a dedicated path for the gate drive return current.