C3M0045065L-TR

Overview

The C3M0045065L-TR is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology in a TOLL package. It features an N-channel enhancement mode configuration with a drain-source voltage of 650 V and a maximum on-resistance of 61 mΩ at 25°C. The device supports a continuous drain current of 49 A and a pulsed current of 132 A. Key electrical parameters include a gate threshold voltage ranging from 1.8 V to 3.6 V, total gate charge of 59 nC, and a junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is typically 0.64 °C/W.

Feature Summary

• Optimized package design incorporating a separate Kelvin source pin to minimize parasitic inductance and reduce gate ringing during high-speed switching operations.
• Third-generation SiC MOSFET architecture engineered for low capacitances and fast intrinsic diode performance with reduced reverse recovery characteristics.
• Halogen-free construction compliant with RoHS standards, supporting industrial qualification requirements.

Applications

• Datacenter Power Supplies
• Telecom Power Supplies
• Energy Storage Systems
• Solar (PV) Inverters
• High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to the reel packaging format required for automated assembly processes. Confirm that the component meets all applicable environmental compliance declarations, including RoHS and REACH SVHC status, prior to integration into final equipment designs.

Selection Notes

Select this component when system requirements demand high blocking voltage combined with low on-state resistance in a compact surface-mount footprint. The separate driver source pin facilitates precise gate control, making it suitable for applications prioritizing high switching frequencies and minimized electromagnetic interference through optimized thermal management.

Part Context

This discrete power transistor belongs to the Wolfspeed C3M series of silicon carbide MOSFETs. It represents the third generation of the manufacturer's SiC technology, designed to replace traditional silicon devices in high-efficiency power conversion systems. The TOLL package provides a balance between thermal performance and PCB space efficiency compared to larger through-hole alternatives.

Replacement Considerations

Cross-reference with other C3M0045065 variants such as the TO-247-4 packaged C3M0045065K if leaded mounting is required. Ensure any substitute maintains compatible gate drive voltage limits and thermal resistance specifications to preserve original circuit performance margins.