C3M0060065D

$13.74

Description：SICFET N-CH 650V 37A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:f181c9c04137 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 650V 37A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1020 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0060065D

Overview

The C3M0060065D is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-247-3 through-hole configuration. It features an N-channel enhancement mode design with a drain-source voltage rating of 650 V and a typical on-resistance of 60 mΩ at 25°C. The device supports a continuous drain current of 29 A and operates within a junction temperature range of -40°C to +175°C. Key electrical characteristics include a total gate charge of 46 nC, a forward transconductance of 10 S, and a power dissipation capacity of 150 W.

Feature Summary

Utilizes third-generation SiC technology for high blocking voltage and low on-resistance.
Enables high-speed switching with minimized parasitic capacitances.
Features a fast intrinsic diode characterized by low reverse recovery charge.

Applications

EV charging systems
Server power supplies
Solar PV inverters
Uninterruptible Power Supplies (UPS)
DC/DC converters

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-3 package dimensions align with the target PCB footprint and thermal management requirements. Ensure compliance with RoHS and REACH standards as specified in the product declarations. Validate operating conditions against the absolute maximum ratings provided in the electrical characteristics table.

Selection Notes

Select this component for applications requiring high efficiency and reduced cooling demands due to its low conduction and switching losses. Consider the device's capability for easy paralleling when scaling power density. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the intended duty cycle. Verify compatibility with standard gate drive voltages and the recommended turn-on voltage specifications.

Part Context

This discrete SiC MOSFET belongs to the C3M family, representing Wolfspeed's third-generation silicon carbide technology. It is designed to replace traditional silicon devices in high-frequency power conversion topologies. The component is part of a broader portfolio aimed at improving system-level power density and enabling new hard-switching PFC topologies like Totem-Pole configurations.

Replacement Considerations

The C3M0060065K is a related variant offering similar electrical performance but housed in a TO-247-4 package with an additional Kelvin source pin for improved switching control.