C3M0060065J

$12.89

Description：SICFET N-CH 650V 36A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:64cc8157c533 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 650V 36A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1020 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0060065J

Overview

The C3M0060065J is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, designed for industrial applications. It features an N-channel enhancement mode configuration housed in a TO-263-7 package with a dedicated Kelvin source pin. The device offers a drain-source voltage of 650 V and a maximum on-resistance of 79 mΩ at 25°C. Continuous drain current reaches 36 A at 25°C case temperature, while pulsed current supports up to 99 A. Operating junction temperatures range from -40°C to +175°C.

Feature Summary

Third-generation SiC MOSFET technology providing low parasitic capacitances and high-speed switching capabilities.
Low-inductance package design incorporating a separate driver source pin to minimize gate loop inductance.
Fast intrinsic body diode characterized by ultra-low reverse recovery charge for efficient hard-switching operation.
High blocking voltage combined with low on-resistance to enhance system efficiency and power density.

Applications

Electric vehicle charging systems
Server power supplies
Solar photovoltaic inverters
Uninterruptible power supplies
DC/DC converters

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status through official documentation before integration. Ensure thermal management designs account for the specified junction-to-case resistance values. Validate that operating conditions remain within the absolute maximum ratings defined in the datasheet electrical characteristics table.

Selection Notes

Select this component when high-frequency switching and reduced cooling requirements are critical. The TO-263-7 package suits surface-mount assembly processes requiring robust thermal dissipation. Consider the Kelvin source pin for precise gate drive control in high-current applications. Evaluate total system losses against the typical switching energy parameters provided in the performance graphs.

Part Context

This part belongs to the C3M family of discrete silicon carbide power MOSFETs manufactured by Wolfspeed. The series utilizes advanced third-generation technology to improve upon previous iterations regarding switching speed and conduction losses. It serves as a direct replacement for legacy silicon devices in high-efficiency power conversion architectures.

Replacement Considerations

Consult the official datasheet for cross-reference information. Verify pinout compatibility and thermal resistance specifications when substituting similar components. Ensure the alternative device meets or exceeds the 650V breakdown voltage and current handling requirements.