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Product Detailed Parameters
- Description：SICFET N-CH 650V 37A TO247-4L
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1020 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The C3M0060065K is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, designed for high-efficiency power conversion. It features a 650V drain-source voltage rating and a maximum on-resistance of 79mΩ at 175°C. The device operates with a continuous drain current of 37A and supports junction temperatures up to 175°C. Packaged in a TO-247-4L format, it includes a dedicated driver source pin to minimize parasitic inductance.
Feature Summary
- Utilizes third-generation SiC technology for low on-resistance across temperature ranges
- Features a fast intrinsic diode with ultra-low reverse recovery characteristics
- Includes a Kelvin source pin to reduce switching noise and improve drive performance
- Designed for high-speed switching with minimized parasitic capacitances
Applications
- EV charging systems
- Server power supplies
- Solar PV inverters
- Uninterruptible Power Supplies (UPS)
- DC/DC converters
Procurement Notes
Verify the specific revision status and datasheet version before integration, as Wolfspeed periodically updates component specifications. Confirm that the TO-247-4L package dimensions match your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under expected operating loads.
Selection Notes
Select this component for applications requiring high blocking voltage and low conduction losses. The Kelvin source pin necessitates a specific gate drive layout to realize its noise reduction benefits. Evaluate system efficiency gains against the cost implications of SiC technology compared to traditional silicon alternatives for your target power density.
Part Context
This discrete MOSFET belongs to Wolfspeed's C3M series of industrial-grade silicon carbide devices. It represents an evolution in wide-bandgap semiconductor technology, offering superior thermal conductivity and breakdown strength compared to conventional silicon power switches used in similar voltage classes.
Replacement Considerations
Direct functional replacements within the same voltage class include the C3M0060065D and C3M0060065J variants. Verify pinout compatibility and thermal characteristics when substituting, as package variations may exist between different generation codes.
