ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SIC, MOSFET, 60M, 650V, TOLL, IN
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 3.64mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1170 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：131W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TOLL
- Package / Case：8-PowerSFN
Download product information
Overview
The C3M0060065L-TR is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology. It features an N-channel enhancement mode configuration housed in a TOLL package with reel and cut tape options. Key electrical parameters include a drain-source voltage of 650 V, a continuous drain current of 39 A at 25°C case temperature, and a maximum on-state resistance of 79 mΩ. The device supports a junction temperature range from -40°C to +175°C, with a power dissipation rating of 131 W.
Feature Summary
- Optimized package design incorporating a separate Kelvin source pin for independent gate drive connection.
- High-speed switching capabilities enabled by low parasitic capacitances and fast intrinsic diode characteristics.
- Low reverse recovery charge associated with the internal body diode to minimize switching losses.
Applications
- Datacenter Power Supplies
- Telecom Power Supplies
- Energy Storage Systems
- Solar PV Inverters
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm the exact packaging format and reel specifications. Ensure that the component meets all applicable RoHS and REACH compliance requirements relevant to your target market before finalizing procurement decisions.
Selection Notes
Select this component when designing systems requiring high blocking voltage combined with low conduction losses. The separate driver source pin facilitates optimized PCB layout for high-frequency operation. Consider the thermal resistance and derating curves to ensure adequate heat management within the specified operating temperature limits.
Part Context
This part belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. The series utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The TOLL package provides a compact form factor suitable for surface-mount applications while maintaining robust thermal and electrical characteristics.
Replacement Considerations
Direct replacements must match the 650V rating, N-channel configuration, and TOLL package footprint. Verify that alternative components offer comparable on-resistance and switching speeds to maintain system efficiency and thermal performance without redesigning the gate drive circuitry.
FAQ
What is the recommended operational gate-source voltage?
The datasheet specifies a recommended turn-on gate voltage of 15 V with a ±5% regulation tolerance.
How does the package design assist in high-frequency applications?
The package includes a separate Kelvin source pin, which allows for independent connection of the gate drive return path to minimize ground bounce and gate ringing during switching transitions.
