C3M0075120K1

$12.13

Description：MOSFET N-CH 1200V 32A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:37673f262ec0 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 32A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 17.9A, 15V
Vgs(th) (Max) @ Id：3.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：145W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0075120K1

Overview

The C3M0075120K1 is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide Power MOSFET housed in a low-profile TO-247-4L LP package. It features a separate driver source pin to minimize gate ringing and switching losses. Key electrical parameters include a drain-source voltage of 1200 V, a maximum on-resistance of 97.5 mΩ at 175°C, and a continuous drain current of 32 A at 25°C case temperature. The device supports an operating junction temperature range from -40°C to +175°C with a power dissipation rating of 145 W.

Feature Summary

Optimized package design with a dedicated driver source pin to reduce switching losses and minimize gate ringing.
Low-profile TO-247-4L LP body construction for enhanced system integration and thermal management.
High blocking voltage combined with low on-resistance to improve overall system efficiency.
Fast intrinsic diode characteristics with low reverse recovery charge for high-speed switching applications.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS
UPS

Procurement Notes

Verify the specific ordering suffix K1 against the manufacturer's official datasheet to confirm package type and compliance status. Ensure that the selected component matches the required thermal and electrical specifications for the intended application environment. Cross-reference the part number with the latest revision history to avoid discrepancies in technical data or legal disclaimers.

Selection Notes

Select this component for designs requiring high-voltage handling and efficient thermal performance in compact form factors. The separate driver source pin is critical for minimizing parasitic inductance effects in high-frequency switching circuits. Evaluate the thermal resistance and derating curves to ensure the junction temperature remains within the specified operational limits under maximum load conditions.

Part Context

This device belongs to Wolfspeed's portfolio of silicon carbide power MOSFETs, designed to replace traditional silicon devices in high-efficiency power conversion systems. The TO-247-4L LP package offers a lower profile compared to standard variants, facilitating better integration into space-constrained industrial and automotive applications while maintaining robust thermal capabilities.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other Wolfspeed SiC MOSFETs with similar voltage ratings and package types, ensuring compatibility with existing PCB layouts and thermal management solutions.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin is included to reduce switching losses and minimize gate ringing by providing a dedicated path for the gate drive return current.