C3M0120065J-TR

$8.92

Description：SIC, MOSFET, 120M, 650V, TO-263-
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0725df8f8e41 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 120M, 650V, TO-263-
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：86W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0120065J-TR

Overview

The C3M0120065J is a 3rd Generation Silicon Carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7. It features a 650V drain-source voltage rating and a typical on-resistance of 120mΩ at 25°C. The device supports an operational gate-source voltage range of -4V to +15V and handles a continuous drain current of 21A at 25°C case temperature. Key electrical parameters include a maximum gate-source voltage of +19V transient and a power dissipation capacity of 86W. The internal body diode exhibits low reverse recovery charge, with typical values of 78nC and 41nC under specific test conditions.

Feature Summary

Utilizes 3rd Generation SiC MOSFET technology for high blocking voltage and low on-resistance.
Features a low inductance package design incorporating a dedicated driver source pin.
Provides 7mm of creepage distance between the drain and source terminals.
Incorporates a fast intrinsic diode characterized by low reverse recovery charge.

Applications

Solar inverters
DC/DC converters
Switch Mode Power Supplies
EV battery chargers
UPS

Procurement Notes

Verify the specific ordering suffix against official Wolfspeed documentation to ensure correct packaging and marking configurations. Confirm that the component meets RoHS and REACh compliance requirements as stated in the datasheet. Ensure that the procurement channel provides valid traceability for the 3rd Generation SiC technology used in this part number.

Selection Notes

Select this component for applications requiring high switching frequencies and reduced cooling needs due to its efficient thermal characteristics. Consider the 650V rating and low capacitances for hard switching PFC topologies like Totem-Pole designs. Evaluate the package's low inductance benefits for minimizing switching losses in high-speed power conversion circuits.

Part Context

This part belongs to the C3M SiC MOSFET family, representing Wolfspeed's 3rd generation silicon carbide technology. It is designed to replace older silicon-based solutions in high-efficiency power systems. The TO-263-7 package facilitates surface-mount assembly while providing robust thermal performance for industrial and automotive-grade power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided datasheet. Users should consult Wolfspeed directly or authorized distributors for qualified alternatives within the same voltage and current ratings.