C3M0120090J-TR

$12.28

Description：SICFET N-CH 900V 22A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:adad01bd7c85 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 22A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id：3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0120090J-TR

Overview

The Wolfspeed C3M0120090J-TR is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET housed in a TO-263-7 surface-mount package. It features a 900V drain-source voltage rating and a maximum on-resistance of 155mΩ at 25°C. The device supports a continuous drain current of 22A and a pulsed current of 50A, with a power dissipation capacity of 83W. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

New low impedance package design incorporating a dedicated driver source pin to minimize parasitic inductance.
High blocking voltage combined with low on-resistance for optimized conduction performance.
Fast intrinsic body diode characterized by low reverse recovery charge.
Wide creepage distance between the drain and source terminals.

Applications

Renewable energy systems
Lighting applications
High voltage DC/DC converters
Telecom power supplies
Induction heating

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards and regulatory compliance specifications for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Evaluate the thermal resistance characteristics and safe operating area limits relative to the target application's cooling capabilities. Ensure the gate drive voltage aligns with the recommended operational parameters to maintain optimal switching performance and prevent overstress conditions during operation.

Part Context

This component belongs to the C3M series of silicon carbide power MOSFETs manufactured by Wolfspeed. The series utilizes advanced SiC technology designed to deliver high-speed switching capabilities and improved system efficiency compared to traditional silicon-based alternatives.

Replacement Considerations

Consult official manufacturer substitution guides or datasheets to identify verified equivalent part numbers. Do not assume functional compatibility based solely on package type or nominal voltage ratings without verifying electrical parameter alignment.