C3M0120090J

$10.44

Description：SICFET N-CH 900V 22A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:2b42e6357cb9 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 22A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id：3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0120090J

Overview

The Wolfspeed C3M0120090J is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET utilizing the C3M technology. It features a 900 V drain-source voltage rating and a maximum continuous drain current of 22 A at 25°C case temperature. The device incorporates a TO-263-7 package with a dedicated driver source pin to minimize parasitic inductance. Key electrical parameters include a typical on-resistance of 120 mΩ, a total gate charge of 18 nC, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

New low impedance package architecture featuring a dedicated Kelvin source pin for improved switching performance.
High blocking voltage combined with low on-resistance to enhance system efficiency.
Fast intrinsic body diode characterized by low reverse recovery charge.
Wide creepage distance between drain and source terminals.

Applications

Renewable energy systems
High voltage DC/DC converters
Telecom power supplies
Induction heating

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm RoHS compliance status and check for specific datasheet revisions prior to ordering. Ensure supply chain partners provide valid traceability documentation. Validate that the received parts match the specified TO-263-7 package and marking codes exactly.

Selection Notes

Select this component for high-frequency applications requiring low switching losses. The dedicated driver source pin necessitates specific PCB layout considerations to maximize performance. Evaluate thermal management requirements based on the 1.5 °C/W junction-to-case thermal resistance. Ensure gate drive voltages remain within the recommended operational limits to maintain reliability.

Part Context

This part belongs to the C3M series of Silicon Carbide MOSFETs manufactured by Wolfspeed. The series utilizes advanced SiC technology to deliver superior performance compared to traditional silicon devices. The C3M0120090J specifically targets high-voltage industrial applications where efficiency and power density are critical design constraints.