C3M0160120D

Overview

The C3M0160120D is a Silicon Carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology. It features an N-channel enhancement mode configuration in a TO-247-3 package. Key electrical parameters include a drain-source voltage of 1200 V and a maximum gate-source voltage of +19 V transient. The device exhibits a typical on-resistance of 160 mΩ at 15 V gate drive and 8.5 A drain current. Continuous drain current is rated at 17 A at 25°C case temperature. Switching characteristics include turn-on energy of 183 µJ and turn-off energy of 16 µJ under specific test conditions. Thermal resistance from junction to case is 1.29 °C/W.

Feature Summary

• Utilizes C3M Silicon Carbide MOSFET technology for high blocking voltage and low on-resistance.
• Features fast intrinsic diode with low reverse recovery charge.
• Designed for high-speed switching with low capacitances.
• Halogen-free and RoHS compliant construction.

Applications

• Renewable energy systems
• High voltage DC/DC converters
• Switch Mode Power Supplies
• Uninterruptible Power Supplies

Procurement Notes

Verify the component matches the exact Wolfspeed part number C3M0160120D. Confirm the package type is TO-247-3. Check for RoHS compliance documentation if required by your manufacturing standards. Ensure the supplier provides traceability to the manufacturer's datasheet revision Rev. 04 or later. Validate that the received units are free from physical damage consistent with the specified mounting torque limits.

Selection Notes

Select this component for applications requiring high voltage handling up to 1200 V with efficient thermal management. The low on-resistance supports higher system efficiency and reduced cooling requirements. Consider the package constraints of the TO-247-3 form factor for board layout. Evaluate the switching energy values against your specific gate resistor and load conditions to ensure performance meets design targets.

Part Context

This device belongs to the Wolfspeed C3M series of Silicon Carbide power MOSFETs. It represents an evolution from previous Cree Inc. branding, as noted in the datasheet revision history. The product is designed to replace silicon-based solutions in high-power applications, offering increased power density and switching frequency capabilities compared to traditional technologies.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided datasheet. Engineers should consult Wolfspeed directly or review their official cross-reference guides for compatible alternatives. Verify pinout compatibility and thermal characteristics when considering any third-party replacements.

FAQ

What is the recommended operational gate-source voltage?

The recommended turn-on gate voltage is 15 V with ±5% regulation tolerance.

Is this component suitable for use in nuclear facilities?

No, the product is not designed, intended, or authorized for use in equipment used in the planning, construction, maintenance, or operation of nuclear facilities.