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Product Detailed Parameters
- Description：SICFET N-CH 900V 11.5A TO247-3
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：360mOhm @ 7.5A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 15 V
- Vgs (Max)：+18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0280090D is a Wolfspeed Silicon Carbide (SiC) MOSFET featuring N-channel enhancement mode operation. It provides a drain-source voltage of 900 V and an on-state resistance of 320 mΩ at 25°C. The device supports a continuous drain current of 10.2 A at 25°C case temperature, with a maximum operating junction temperature of 150°C. Packaged in TO-247-3, it includes a fast intrinsic diode with low reverse recovery charge.
Feature Summary
- Utilizes Wolfspeed C3M SiC technology for high blocking voltage and low on-resistance
- Features fast switching capabilities with low capacitances
- Incorporates a fast intrinsic diode with low reverse recovery characteristics
- Compliant with RoHS standards and halogen-free
Applications
- Renewable energy systems
- Lighting applications
- High voltage DC/DC converters
- Telecom power supplies
- Induction heating
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation to ensure accuracy of electrical parameters. Confirm that the TO-247-3 package dimensions match the design requirements. Check for any recent updates regarding the transition from Cree branding to Wolfspeed branding on the component marking.
Selection Notes
Select this component for designs requiring high-voltage handling with efficient thermal performance. Ensure the gate drive circuitry accommodates the recommended 15V turn-on voltage. Evaluate the system's thermal management needs based on the specified junction-to-case thermal resistance and derating curves.
Part Context
This part belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. It is designed to replace traditional silicon devices in high-frequency, high-efficiency power conversion applications. The TO-247-3 package allows for standard through-hole mounting solutions compatible with existing industrial infrastructure.
Replacement Considerations
Direct pin-compatible replacements within the same voltage class may include other C3M series variants such as C3M0065090D or C3M0120090D, provided their on-resistance and current ratings meet the specific application requirements.
