C3M0900170J

Description：SICFET N-CH 1700V 4.4A D2PAK
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:f64e11dedfc8 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1700V 4.4A D2PAK
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id：4.2V @ 550µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 15 V
Vgs (Max)：+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1200 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0900170J

Overview

The Wolfspeed C3M0900170J is a 1700V N-Channel Enhancement Mode Silicon Carbide Power MOSFET housed in a TO-263-7L package. It features a maximum drain-source voltage of 1700V and a typical on-state resistance of 900mΩ at VGS=15V. The device supports an operational gate-source voltage range of +12V to +18V, with a transient limit of +20V. Continuous drain current is rated at 4.4A at 25°C case temperature. Key electrical characteristics include a total gate charge of 8nC, input capacitance of 202pF, and output stored energy (Eoss) of 8μJ. Operating junction temperatures range from -55°C to +175°C.

Feature Summary

Compatible with most flyback controllers via a wide 12V to 18V operational gate-source voltage range.
Ultra-low drain-gate capacitance minimizes switching losses and reduces gate ringing for smooth waveforms.
Qualified for operation under high humidity and high temperature environmental conditions.
Halogen-free and RoHS compliant construction.

Applications

Auxiliary power supplies
Switch Mode Power Supplies
High-Voltage capacitive loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact reel quantity and tape-and-reel specifications. Ensure that the TO-263-7L package dimensions align with your PCB footprint requirements before finalizing procurement. Confirm compliance with RoHS and REACH standards if required by your supply chain regulations.

Selection Notes

Select this component when designing systems requiring high blocking voltage combined with low conduction losses. The 12V to 18V gate drive compatibility allows for direct integration with standard flyback controllers without needing higher voltage drivers. Consider the thermal resistance and derating curves for high-temperature environments to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to the Wolfspeed C3M series of silicon carbide MOSFETs, designed for high-voltage power conversion applications. The C3M0900170J specifically targets auxiliary power designs where efficiency and reliability are critical. It utilizes Wolfspeed's third-generation SiC technology to offer improved performance over previous generations in terms of switching speed and on-resistance.