C4D02120E

$2.12

Description：DIODE SIL CARB 1200V 10A TO2522
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:c365c775b467 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 10A TO2522
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 2 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 1200 V
Capacitance @ Vr, F：167pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C4D02120E

Overview

The Wolfspeed C4D02120E is a discrete Silicon Carbide Schottky diode rated for a repetitive peak reverse voltage of 1200 V and a maximum continuous forward current of 2 A at 25 °C. It utilizes a TO-252-2 surface-mount package with a thermal resistance from junction to case of 2.5 °C/W. The device operates within a temperature range of -55 °C to +175 °C, featuring a typical forward voltage of 1.4 V at 2 A and 25 °C.

Feature Summary

Zero reverse recovery current due to majority carrier operation
Positive temperature coefficient on forward voltage enabling parallel operation without thermal runaway
High-frequency switching capability with essentially no switching losses

Applications

Switch mode power supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free wheeling diodes in inverter stages
LED lighting power supplies
AC/DC converters

Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before finalizing designs, as documentation updates may occur. Confirm that the TO-252-2 package dimensions and recommended solder pad layouts match your PCB design requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance under expected operating conditions.

Selection Notes

Select this component when replacing bipolar rectifiers to achieve higher efficiency and reduced heat sink requirements. Consider the 1200 V rating and 2 A current capacity for low-power high-voltage applications. Evaluate the positive temperature coefficient benefits if parallel device configurations are necessary for current handling.

Part Context

This part belongs to Wolfspeed's discrete Silicon Carbide Schottky diode portfolio. It is designed to replace traditional silicon or bipolar devices in high-efficiency power conversion systems. The TO-252-2 package provides a compact solution for surface-mount assembly in various industrial and commercial power electronics applications.