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The Wolfspeed C4D05120E-TR is a silicon carbide Schottky diode rated for 1200 V repetitive peak reverse voltage and 5 A continuous forward current. It utilizes a TO-252-2 surface-mount package with a junction-to-case thermal resistance of 1.5 °C/W. The device operates within a temperature range of -55 °C to +175 °C, featuring a maximum forward voltage of 1.8 V at 25 °C and 3.0 V at 175 °C. Reverse leakage current is specified at 150 µA maximum at 25 °C and 300 µA at 175 °C under 1200 V bias.
Verify the specific ordering suffix '-TR' against official documentation to confirm tape-and-reel packaging configuration. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure the component matches the exact Wolfspeed part number to avoid substitution errors during assembly.
Select this component for applications requiring low conduction losses and high efficiency. The positive temperature coefficient facilitates paralleling multiple devices for higher current capacity. Consider the thermal resistance and derating curves when designing heat dissipation solutions for high-temperature environments.
This discrete SiC Schottky diode belongs to Wolfspeed's portfolio of wide-bandgap power semiconductors. It serves as an alternative to traditional bipolar rectifiers, offering superior performance in terms of switching speed and thermal management. The TO-252-2 package provides a compact solution for surface-mount designs.
No public confirmed substitute part numbers are available in the provided source material.