C4D05120E

Overview

The Wolfspeed C4D05120E is a 1200 V Silicon Carbide Schottky Diode housed in a TO-252-2 surface-mount package. It supports a continuous forward current of 5 A at 25 °C and withstands a repetitive peak reverse voltage of 1200 V. The device exhibits a maximum forward voltage of 1.8 V at 5 A and 25 °C, with a non-repetitive peak surge current rating of 46 A. Operating junction temperatures range from -55 °C to +175 °C.

Feature Summary

• Zero reverse recovery current for minimal switching losses
• Positive temperature coefficient on forward voltage
• High-frequency operation capability
• Temperature-independent switching behavior

Applications

• Switch mode power supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free wheeling diodes in inverter stages
• LED lighting power supplies
• AC/DC converters

Procurement Notes

Verify the specific manufacturer part number against official datasheets before procurement. Confirm that the component matches the required TO-252-2 package dimensions and electrical ratings. Ensure compliance with RoHS standards as specified in the product documentation. Check for any recent rebranding updates from Cree to Wolfspeed on the physical marking.

Selection Notes

Select this component for applications requiring high-efficiency rectification with negligible reverse recovery charge. The positive temperature coefficient allows for safe parallel operation without thermal runaway. Consider the thermal resistance characteristics when designing heat dissipation solutions for high-temperature environments up to 175 °C.

Part Context

This discrete silicon carbide Schottky diode belongs to Wolfspeed's portfolio of unipolar rectifiers designed to replace traditional bipolar devices. It utilizes SiC technology to achieve superior performance in terms of switching speed and thermal stability compared to conventional silicon alternatives.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring the substitute component meets or exceeds the 1200 V blocking voltage and 5 A current requirements. Thermal management strategies must be reassessed if the alternative device has different thermal resistance values.