ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 24.5A TO220
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：24.5A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 7.5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：250 µA @ 1200 V
- Capacitance @ Vr, F：560pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The C4D08120A is a 4th generation 1200 V Silicon Carbide Schottky diode in a TO-220-2 package. It features a maximum continuous forward current of 24.5 A at 25°C and 8 A at 157°C, with a peak repetitive reverse voltage of 1200 V. The device exhibits a typical forward voltage of 1.5 V at 8 A and 25°C, and a total capacitive charge of 37 nC at 800 V. Thermal resistance from junction to case is typically 1.1 °C/W, supporting operation within a -55°C to +175°C temperature range.
Feature Summary
- Zero reverse recovery current and forward recovery voltage due to majority carrier operation
- Low forward voltage drop with a positive temperature coefficient for stable thermal performance
- Temperature-independent switching behavior suitable for high-frequency applications
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Procurement Notes
Verify the specific revision status and RoHS compliance documentation directly with Wolfspeed or authorized distributors before finalizing procurement plans. Confirm that the TO-220-2 package dimensions align with your PCB layout requirements. Ensure all electrical ratings are validated against your system's worst-case operating conditions to maintain reliability standards.
Selection Notes
Select this component when designing systems requiring high-efficiency rectification with minimal switching losses. The zero reverse recovery characteristic makes it ideal for hard-switching topologies where minimizing tail current is critical. Evaluate the thermal management capabilities based on the specified junction-to-case resistance to ensure adequate heat dissipation under load.
Part Context
This discrete SiC Schottky diode belongs to Wolfspeed’s 4th generation product family, designed to replace silicon-based solutions in power electronics. It offers higher efficiency standards and enables increased operating frequencies. The technology supports reduced cooling requirements and improved thermal performance compared to traditional silicon alternatives.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided datasheet.
FAQ
Does the C4D08120A exhibit reverse recovery charge?
No, as a Silicon Carbide Schottky diode, it is a majority carrier device and has zero reverse recovery charge.
What is the maximum junction temperature rating?
The maximum junction temperature (Tj) rating is +175°C.
