SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Wolfspeed C4D08120E is a 1200 V Silicon Carbide Schottky diode housed in a TO-252-2 package. It supports a continuous forward current of 8 A at 135 °C and 24.5 A at 25 °C, with a peak repetitive reverse voltage of 1200 V. The device exhibits a maximum forward voltage of 1.8 V at 25 °C and 3 V at 175 °C when conducting 8 A. Reverse leakage current is specified at 250 µA (max) at 25 °C and 350 µA at 175 °C under full blocking voltage. Thermal resistance from junction to case is 1.1 °C/W, enabling power dissipation up to 136.5 W at 25 °C.
Verify the specific ordering suffix 'E' against the manufacturer's official documentation to confirm exact packaging configuration and compliance status. Ensure that the component marking matches the datasheet identifier C4D08120. Confirm thermal management requirements align with the specified junction-to-case resistance for your intended operating temperature range.
Select this component for designs requiring high-efficiency rectification with minimal switching losses. The positive temperature coefficient allows for reliable parallel operation without thermal runaway risks. Evaluate the thermal derating curves to ensure the continuous forward current meets system demands at the expected case temperatures.
This discrete silicon carbide Schottky diode belongs to Wolfspeed's portfolio of unipolar rectifiers designed to replace traditional bipolar devices. It utilizes wide-bandgap material properties to achieve superior performance in high-voltage and high-temperature environments compared to conventional silicon alternatives.
No public confirmed substitute part numbers are available in the provided documentation.