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The C4D10120E is a 1200 V, 10 A Silicon Carbide Schottky Diode manufactured by Wolfspeed. It utilizes a TO-252-2 package and operates within a junction temperature range of -55 °C to +175 °C. The device features a maximum repetitive peak reverse voltage (VRRM) of 1200 V and a continuous forward current (IF) of 10 A at 156 °C case temperature. Electrical characteristics include a typical forward voltage (VF) of 1.5 V at 10 A and 25 °C, with a maximum reverse current (IR) of 250 µA at 1200 V and 25 °C.
Verify the specific ordering suffix 'E' against official documentation to confirm the exact package type and marking configuration. Ensure that the procurement channel provides valid traceability and authenticity guarantees for Wolfspeed components. Confirm compliance requirements such as RoHS and REACH status directly from the manufacturer's declaration before finalizing orders.
Select this component when designing circuits requiring high-frequency operation and minimal switching losses. The positive temperature coefficient allows for safe parallel operation without thermal runaway risks. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation for the intended application environment.
This part belongs to the Wolfspeed silicon carbide Schottky diode portfolio. It serves as a unipolar rectifier designed to replace traditional bipolar devices. The technology enables higher system efficiency and reduced cooling requirements compared to standard silicon alternatives.
Consult official substitution guides for compatible Wolfspeed SiC diodes. Verify pinout compatibility and electrical ratings before replacing existing designs.