C4D15120A

Overview

The C4D15120A is a fourth-generation 1200 V Silicon Carbide Schottky diode in a TO-220-2 package. It features a maximum continuous forward current of 15 A at 152.5 °C and a peak repetitive reverse voltage of 1200 V. The device exhibits a typical forward voltage of 1.6 V at 15 A and 25 °C, with a maximum reverse current of 35 µA at 1200 V. Thermal resistance from junction to case is typically 0.7 °C/W, supporting operation within a -55 °C to +175 °C temperature range.

Feature Summary

• Zero reverse recovery current and forward recovery voltage for minimal switching losses
• Positive temperature coefficient on forward voltage enabling safe parallel operation without thermal runaway
• Temperature-independent switching behavior for consistent performance across operating ranges

Applications

• Industrial switched mode power supplies
• Boost stages for PFC and DC-DC converters
• Solar inverters
• Uninterruptible and auxiliary power supplies

Procurement Notes

Verify the specific ordering suffix against official Wolfspeed documentation to confirm packing type and marking details. Ensure that the selected component meets all applicable RoHS and REACh compliance requirements for your target market. Confirm that the TO-220-2 mounting torque specifications are adhered to during assembly to maintain mechanical integrity and thermal performance.

Selection Notes

Select this component when high-frequency operation and elevated efficiency standards are required compared to silicon-based solutions. The positive temperature coefficient allows for easy paralleling to increase current capacity without complex balancing circuits. Consider the reduced cooling requirements and improved thermal performance for applications where system size and weight are critical constraints.

Part Context

This device belongs to Wolfspeed's fourth-generation 1200 V Silicon Carbide Schottky diode lineup. It utilizes SiC technology to achieve higher power densities and frequencies than traditional silicon devices. The product is designed to replace bipolar diodes, offering lower overall system costs through reduced cooling needs and simplified circuit topologies.

Replacement Considerations

Direct substitutes include other 1200 V SiC Schottky diodes in similar packages, such as the C4D10120A or C4D20120A, depending on current rating requirements. Verify pinout compatibility and thermal resistance values before implementation.

FAQ

Does the C4D15120A exhibit reverse recovery charge?

No, as a majority carrier device, it has zero reverse recovery charge and zero forward recovery voltage.

Can multiple C4D15120A diodes be connected in parallel?

Yes, they can be easily paralleled to meet various application demands without concern for thermal runaway due to their positive temperature coefficient.