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C4D15120D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 1200V TO247-3. Review the specifications below when checking this part for your BOM.
The Wolfspeed C4D15120D is a fourth-generation 1200 V Silicon Carbide Schottky diode housed in a TO-247-3 package. It features a dual-anode common-cathode configuration with two independent legs per device. Maximum ratings include a repetitive peak reverse voltage of 1200 V and a continuous forward current of 24 A per leg at 25°C case temperature. The typical forward voltage is 1.5 V at 8 A, while the maximum reverse current is 250 µA at 1200 V and 25°C.
Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm RoHS and REACh compliance documentation availability prior to integration. Ensure procurement sources provide valid traceability records. Check for updated datasheet revisions to confirm current specifications. Validate packaging type matches design requirements.
Evaluate thermal resistance values against system cooling capabilities. Consider forward voltage characteristics for conduction loss calculations. Assess capacitance stored energy for high-frequency switching applications. Verify surge current ratings match expected transient conditions. Confirm package mounting torque specifications for mechanical reliability.
This component belongs to Wolfspeed's fourth-generation silicon carbide discrete diode portfolio. It utilizes SiC technology to achieve higher efficiency and power density compared to traditional silicon solutions. The dual-leg design allows for flexible circuit topologies requiring common cathode configurations.
No public confirmed substitute part numbers are available in the provided documentation.
The C4D15120D exhibits zero reverse recovery charge and zero forward recovery voltage due to its majority carrier operation.
Yes, the datasheet specifies that devices can be paralleled without concern for thermal runaway.
The junction and storage temperature range is specified from -55°C to +175°C.
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