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The Wolfspeed C4D15120H is a fourth-generation 1200 V, 15 A Silicon Carbide Schottky Barrier diode housed in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 39 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.5 V at 15 A and 25°C, with a junction-to-case thermal resistance of 0.86 °C/W. Operating within a junction temperature range of -55°C to +175°C, it offers zero reverse recovery charge characteristics.
Verify the specific ordering code C4D15120H against official Wolfspeed documentation to confirm the tube packing type and RoHS compliance status. Ensure that the TO-247-2 mounting torque specifications are strictly adhered to during assembly to maintain mechanical integrity and thermal performance. Confirm REACh SVHC declarations are current before finalizing procurement decisions.
Select this component when designing systems requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. The zero reverse recovery characteristic makes it suitable for boosting efficiency in power factor correction and DC-DC stages. Consider the 1200 V rating for applications demanding robust blocking capabilities in industrial and solar environments.
This device belongs to Wolfspeed's fourth-generation 1200 V Silicon Carbide product line. It is designed to replace traditional silicon-based diodes in power electronics systems to achieve higher efficiency standards and greater power densities. The technology supports system cost reductions through improved thermal performance and simplified circuit topologies.
No public confirmed substitute part numbers are documented in the provided datasheet.
No, as a majority carrier device, the C4D15120H has zero reverse recovery charge and zero forward recovery voltage.
The recommended mounting torque is 1 Nm (8.8 lbf-in) using an M3 or 6-32 screw.