C4D20120D

$13.50

Description：DIODE ARR SIC 1200V 34A TO247-3
Series：Z-Rec®

SKU:2fd42360bb40 Category: Diode Arrays Brand: Wolfspeed, Inc.

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Product introduction

C4D20120D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 1200V 34A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for C4D20120D

Description：DIODE ARR SIC 1200V 34A TO247-3
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：34A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：200 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for C4D20120D

C4D20120D

Diode Arrays Overview

The Wolfspeed C4D20120D is a fourth-generation, 1200 V Silicon Carbide Schottky diode housed in a TO-247-3 package. It features dual internal die configurations with two anodes and one cathode. Key electrical parameters include a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 68 A per device at 25°C case temperature. The typical forward voltage is 1.5 V at 10 A, while the total capacitive charge is 52 nC. Power dissipation reaches 352 W per device at 25°C.

Diode Arrays Feature Summary

Zero reverse recovery current and forward recovery voltage for high-frequency operation
Temperature-independent switching behavior
Parallel devices without thermal runaway
High dV/dt ruggedness

Diode Arrays Applications

Boost diodes in PFC or DC/DC stages
Free wheeling diodes in inverter stages
Switch mode power supplies
Solar inverters
AC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm packing type, as the standard C4D20120D is supplied in tubes. Ensure compliance documentation such as RoHS and REACh declarations are requested if required by your supply chain standards. Confirm that the TO-247-3 mounting torque specifications align with your assembly equipment capabilities before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing systems requiring high efficiency and reduced cooling requirements compared to silicon solutions. The dual-anode structure allows for flexible circuit topologies. Evaluate the thermal resistance values against your heatsink design to ensure junction temperatures remain within the -55 to +175 °C operating range under expected load conditions.

Diode Arrays Part Context

This part belongs to Wolfspeed's fourth-generation 1200 V Silicon Carbide Schottky diode family. It is designed to replace bipolar diodes in power electronics systems to achieve higher frequencies and power densities. The device complements Wolfspeed's SiC MOSFET portfolio for integrated system designs.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers include C4D20120A, C4D20120H, and E4D20120D. Verify pinout compatibility and thermal characteristics when substituting.