C4D40120D

Diode Arrays Overview

The Wolfspeed C4D40120D is a fourth-generation, 1200 V Silicon Carbide Schottky diode housed in a TO-247-3 package. It features a dual-anode common-cathode configuration with two independent legs per device. Maximum ratings include a repetitive peak reverse voltage of 1200 V and a continuous forward current of 56.5 A per leg at 25°C case temperature. The typical forward voltage is 1.5 V at 20 A and 25°C junction temperature. Electrical characteristics specify a maximum reverse current of 200 µA at 1200 V and 25°C. Thermal resistance from junction to case is typically 0.29 °C/W per device.

Diode Arrays Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Temperature-independent switching behavior for stable high-frequency performance
• Capable of parallel connection without risk of thermal runaway

Diode Arrays Applications

• Boost diodes in Power Factor Correction (PFC) stages
• Free-wheeling diodes in inverter stages
• Switch mode power supplies
• Solar inverters
• AC/DC converters

Diode Arrays Procurement Notes

Verify the specific revision number on the datasheet before finalizing designs, as Wolfspeed updates documentation periodically. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors. Ensure that the TO-247-3 mounting torque specifications are strictly followed during assembly to maintain mechanical integrity and thermal performance.

Diode Arrays Selection Notes

Select this component when designing systems requiring high-voltage blocking capabilities up to 1200 V combined with low switching losses. The dual-leg structure allows for efficient utilization in bridge configurations or interleaved topologies. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance and derating curves to ensure reliable operation under varying load conditions.

Diode Arrays Part Context

This device belongs to Wolfspeed's fourth-generation Silicon Carbide product line, designed to replace traditional silicon solutions in power electronics. It offers higher efficiency standards and enables increased operating frequencies. The TO-247-3 through-hole package facilitates integration into industrial and automotive applications where robust packaging and ease of mounting are required.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Diode Arrays FAQ

Does the C4D40120D exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it is a majority carrier device and does not have reverse recovery charge.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 1150 A per device at a case temperature of 25°C with a pulse duration of 10 µs.

How many independent legs does the C4D40120D contain?

The device contains two independent legs configured as dual anodes with a common cathode.