C6D05170H

$9.04

Description：DIODE SIL CARB 1700V 21A TO2472
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:8aab0f35312c Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1700V 21A TO2472
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1700 V
Current - Average Rectified (Io)：21A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 5 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：9 µA @ 1700 V
Capacitance @ Vr, F：638pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C6D05170H

Overview

The C6D05170H is a 6th Generation Silicon Carbide Schottky diode rated for 1700 V repetitive peak reverse voltage and 5 A forward current. It utilizes a TO-247-2 package with a junction temperature range of -55 °C to +175 °C. The device exhibits low forward voltage drop, zero reverse recovery charge, and temperature-independent switching behavior.

Feature Summary

Zero reverse recovery current and forward recovery voltage
Temperature-independent switching behavior
Low profile package with low inductance

Applications

Industrial Switched Mode Power Supplies
Uninterruptible & AUX Power Supplies
Boost for PFC & DC-DC Stages
Solar Inverters

Procurement Notes

Verify the specific ordering suffix 'H' corresponds to the tube packing type listed in the official datasheet. Confirm compliance documentation availability directly with Wolfspeed representatives for REACh SVHC declarations. Ensure application suitability assessments are conducted by the buyer prior to integration.

Selection Notes

Select this component for high-frequency power conversion systems requiring reduced cooling requirements. Evaluate thermal resistance parameters against system heat dissipation capabilities. Consider paralleling multiple units if higher current demands exceed single-device ratings without risking thermal runaway.

Part Context

This discrete silicon carbide Schottky barrier diode belongs to Wolfspeed's 6th Generation portfolio. It is designed to replace silicon-based solutions to achieve higher efficiency standards and increased power densities in diverse power electronics applications.