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The C6D06065G is a 650 V, 6 A Silicon Carbide Schottky Barrier diode in a TO-263-2 package. It features a maximum repetitive peak reverse voltage and DC blocking voltage of 650 V. The continuous forward current rating is 23 A at a case temperature of 25 °C. Typical forward voltage is 1.27 V at 6 A and 25 °C. Reverse current is typically 2 µA at 650 V and 25 °C. Total capacitive charge is typically 22 nC at 400 V. Junction-to-case thermal resistance is typically 2.05 °C/W. Operating junction and storage temperatures range from -55 to +175 °C.
Verify the specific part number suffix against official Wolfspeed documentation to confirm packaging configuration and reel specifications. Ensure compliance requirements such as RoHS and REACH are confirmed for the intended region. Cross-reference datasheet revision dates to validate electrical characteristics and package dimensions before finalizing procurement orders.
Select this component for designs requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. Evaluate the thermal resistance and current derating curves to ensure adequate heat dissipation within the specified junction temperature limits. Consider paralleling multiple units if higher current capacity is needed without thermal runaway risks.
This discrete Silicon Carbide Schottky diode belongs to the C6D product family designed for high-efficiency power electronics. It offers performance advantages over silicon-based solutions by enabling higher frequencies and power densities. The device supports lower overall system costs through improved thermal performance and reduced cooling needs.
Consult official Wolfspeed substitution guides for verified equivalents. Verify pinout compatibility and thermal interface requirements when replacing existing components in established designs.
No, as a Silicon Carbide Schottky diode, it is a majority carrier device with zero reverse recovery charge.
The maximum operating junction temperature is +175 °C.