C6D06065G

$3.11

Description：DIODE SIL CARB 650V 23A TO263-2
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:57249110f663 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 23A TO263-2
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：23A
Voltage - Forward (Vf) (Max) @ If：1.4 V @ 6 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：20 µA @ 650 V
Capacitance @ Vr, F：393pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C6D06065G

Overview

The Wolfspeed C6D06065G is a Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 6 A continuous forward current. It utilizes a TO-263-2 package with a maximum power dissipation of 73 W at 25 °C case temperature. The device exhibits a typical forward voltage of 1.27 V at 6 A and 25 °C, alongside a maximum reverse leakage current of 20 µA at 650 V. Thermal resistance from junction to case is specified at 2.05 °C/W, supporting operation within a -55 °C to +175 °C junction temperature range.

Feature Summary

Zero reverse recovery charge and forward recovery voltage due to majority carrier conduction
Low forward voltage drop with a positive temperature coefficient
Temperature-independent switching behavior
Low leakage current across operating temperatures

Applications

Industrial power supplies
Switch mode power supplies
Server and telecom power supplies
Power factor correction circuits
Solar inverters
Uninterruptible power supplies

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm active status and revision level. Ensure compatibility with recommended solder pad layouts provided in the datasheet. Confirm compliance requirements such as RoHS and REACH declarations directly with the supplier or manufacturer representative prior to procurement.

Selection Notes

Select this component for applications requiring high-frequency operation and improved thermal performance compared to silicon solutions. The TO-263-2 package facilitates surface mounting while maintaining robust heat dissipation capabilities. Consider the derating curves for continuous forward current based on expected case temperatures to ensure reliable operation under varying load conditions.

Part Context

This discrete SiC Schottky diode belongs to the C6D product family designed for industrial qualification. It enables higher efficiency standards and increased power densities in power electronics systems. The technology allows for reduced cooling requirements and lower overall system costs when replacing traditional silicon-based rectifiers in diverse power conversion topologies.