C6D08065E-TR

Overview

The C6D08065E is a 650 V, 8 A Silicon Carbide Schottky Diode utilizing Wolfspeed's 6th generation technology. It features a TO-252-2 package with a maximum repetitive peak reverse voltage of 650 V and a continuous forward current of 29 A at 25 °C case temperature. The device exhibits a typical forward voltage of 1.27 V at 8 A and 25 °C, alongside a maximum reverse leakage current of 40 µA at 650 V. Operating junction temperatures range from -55 °C to +175 °C, with a thermal resistance from junction to case of 1.77 °C/W.

Feature Summary

• Zero reverse recovery current and zero forward recovery voltage for clean switching
• Positive temperature coefficient on forward voltage to prevent thermal runaway during parallel operation
• Temperature-independent switching behavior across the operating range

Applications

• Switch mode power supplies (SMPS)
• Server and telecom power supplies
• Industrial power supplies
• Solar applications
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS and REACH requirements by requesting the latest declarations from the supplier. Confirm that the component matches the intended thermal management design, as performance ratings are dependent on case temperature conditions specified in the datasheet.

Selection Notes

Select this component for high-efficiency designs requiring low forward voltage drop and minimal switching losses. The positive temperature coefficient allows for safe parallel operation without additional balancing components. Consider the TO-252-2 package dimensions and recommended solder pad layout for PCB integration. Evaluate thermal resistance requirements based on the expected case temperature and power dissipation limits.

Part Context

This diode belongs to the C6D series of silicon carbide Schottky rectifiers from Wolfspeed. It represents the company's 6th generation SiC technology, designed to improve system-level efficiency and power density compared to previous generations. The series targets high-frequency power conversion applications where reduced heat sink requirements and higher operating temperatures are beneficial.

Replacement Considerations

Direct substitutes within the same family include the C6D08065Q-TR, which shares similar electrical characteristics but utilizes a QFN-4 package instead of the TO-252-2 form factor. Designers must verify pinout compatibility and thermal interface differences when considering alternative packages within the product line.

FAQ

Does the C6D08065E exhibit reverse recovery charge?

No, it is a majority carrier diode, so there is no reverse recovery charge.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.