C6D08065G-TR

Overview

The C6D08065G is a 6th Generation Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 30 A continuous forward current at 25 °C case temperature. It features a maximum forward voltage of 1.40 V at 8 A and 25 °C, with a typical junction-to-case thermal resistance of 1.62 °C/W. The device operates within a junction temperature range of -55 °C to +175 °C and utilizes a TO-263-2 surface-mount package.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Temperature-independent switching behavior
• Low leakage current characteristics
• Positive temperature coefficient for forward voltage

Applications

• Industrial power supplies
• Switch mode power supplies
• Server/telecom power supplies
• Power factor correction
• Solar inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and reel specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for Wolfspeed components. Confirm compliance requirements such as RoHS and REACH status directly from the latest datasheet revision before finalizing orders.

Selection Notes

Select this component when high-frequency switching and elevated efficiency are required in power conversion systems. The low forward voltage drop contributes to reduced conduction losses, while the absence of reverse recovery charge minimizes switching losses. Consider the thermal management capabilities relative to the specified junction-to-case thermal resistance for the intended operating environment.

Part Context

This device belongs to the 6th Generation series of Silicon Carbide Schottky diodes manufactured by Wolfspeed. It represents an advancement over previous generations, offering improved performance metrics suitable for modern power electronics designs that demand higher power densities and operational frequencies compared to traditional silicon-based solutions.

Replacement Considerations

Direct replacements must match the 650 V rating, 8 A minimum forward current capability, and TO-263-2 package outline. Verify that alternative devices exhibit comparable zero reverse recovery characteristics and similar thermal resistance values to ensure equivalent system performance without redesigning the cooling infrastructure.

FAQ

Does the C6D08065G exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it is a majority carrier device and exhibits zero reverse recovery charge.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.