C6D08065Q-TR

$3.87

Description：DIODE SIL CARBIDE 650V 28A 4QFN
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dfbde0961e68 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARBIDE 650V 28A 4QFN
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：28A
Voltage - Forward (Vf) (Max) @ If：1.5 V @ 8 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：20 µA @ 650 V
Capacitance @ Vr, F：518pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：4-PowerVQFN
Supplier Device Package：4-QFN (8x8)
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C6D08065Q-TR

Overview

The C6D08065Q-TR is a 6th generation 650 V Silicon Carbide Schottky diode in an 8x8 mm QFN package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 33 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.27 V at 8 A and 25°C, with a non-repetitive peak forward surge current capability of 55 A. Thermal resistance from junction to case is typically 1.4 °C/W, supporting operation within a junction temperature range of -55°C to +175°C.

Feature Summary

Low forward voltage drop with positive temperature coefficient
Zero reverse recovery current and forward recovery voltage
Temperature-independent switching behavior
Low profile package with low inductance

Applications

Enterprise power, server, and telecom power supplies
Switched mode power supplies
Industrial power supplies
Boost power factor correction
Bootstrap diode applications

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to tape and reel packaging when sourcing components. Confirm RoHS compliance status through official documentation prior to integration. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Validate that application requirements align with the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component for high-frequency power conversion systems requiring reduced conduction losses. The positive temperature coefficient facilitates safe parallel operation without thermal runaway concerns. Consider the QFN 8x8 package dimensions for applications demanding low profile and high power density solutions compared to traditional leaded packages.

Part Context

This device belongs to Wolfspeed's 6th generation 650 V Silicon Carbide Schottky diode family. It utilizes SiC technology to achieve higher efficiency standards than silicon-based solutions. The product enables designers to reach higher frequencies and power densities while reducing overall system costs through improved thermal performance and lower cooling requirements.