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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 35A TO252-2
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：35A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：611pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C6D10065E is a 6th generation Silicon Carbide Schottky Diode rated for 650 V repetitive peak reverse voltage and 10 A continuous forward current at 125 °C. It features a TO-252-2 package with a maximum forward voltage of 1.50 V at 10 A and 25 °C. The device exhibits zero reverse recovery charge, resulting in negligible switching losses, and maintains stable performance across temperatures from -55 °C to +175 °C.
Feature Summary
- Zero reverse recovery charge enables ultra-fast switching operations without tail currents.
- Positive temperature coefficient on forward voltage allows safe parallel operation without thermal runaway.
- Temperature-independent switching behavior ensures consistent performance across the operating range.
Applications
- Switch mode power supplies
- Server and telecom power supplies
- Industrial power supplies
- Solar energy systems
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and quantity. Ensure compliance requirements such as RoHS and REACH declarations are obtained directly from Wolfspeed representatives or their product documentation portal before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high efficiency and reduced heat sink sizes due to low conduction losses. The positive temperature coefficient facilitates paralleling multiple devices to increase current capacity. Verify that the system operates within the specified junction temperature limits of -55 °C to +175 °C for optimal reliability.
Part Context
This discrete silicon carbide Schottky diode belongs to the C6D family utilizing Wolfspeed's 6th generation technology. It serves as a direct replacement for traditional silicon diodes in high-frequency power conversion circuits, offering superior thermal conductivity and blocking capabilities compared to legacy materials.
Replacement Considerations
The datasheet indicates it is a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific alternative part numbers are listed in the provided documentation.
FAQ
Does the C6D10065E exhibit reverse recovery charge?
No, it is a majority carrier diode with zero reverse recovery charge, eliminating reverse recovery current during switching.
What is the maximum operating junction temperature?
The maximum operating junction and storage temperature range is -55 °C to +175 °C.
