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The C6D10170H is a 6th Generation 1700 V, 10 A Silicon Carbide Schottky Diode in a TO-247-2 package. It features a maximum repetitive peak reverse voltage and DC blocking voltage of 1700 V. The continuous forward current rating is 40 A at 25°C case temperature, decreasing to 10 A at 160°C. Typical forward voltage is 1.45 V at 10 A and 25°C junction temperature. Thermal resistance from junction to case ranges from 0.62°C/W typical to 0.73°C/W maximum.
Verify the specific part number C6D10170H against official Wolfspeed documentation to confirm current status and revision history. Ensure compatibility with TO-247-2 mounting requirements, specifically an 8.8 lbf-in torque for 6-32 screws or 1 Nm for M3 screws. Confirm compliance with RoHS and REACh standards as declared by the manufacturer before integration into final designs.
Select this component for applications requiring high-voltage blocking capabilities up to 1700 V and efficient power conversion. Consider the thermal derating curves when determining operating conditions above 25°C case temperature. The device is suitable for paralleling without thermal runaway concerns, allowing scalability for higher current demands in diverse power electronics systems.
This discrete silicon carbide Schottky diode belongs to Wolfspeed's 6th Generation portfolio. It is designed to replace silicon diodes in high-frequency and high-efficiency applications. The product offers improved system efficiency and reduced cooling requirements compared to traditional silicon solutions, supporting higher power densities in industrial and renewable energy sectors.
The datasheet indicates direct drop-in replacement potential for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface specifications when substituting legacy components.