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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 66A TO220-2
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：66A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：80 µA @ 650 V
- Capacitance @ Vr, F：1153pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C6D20065A is a 6th generation Silicon Carbide Schottky Barrier diode in a TO-220-2 package. It features a 650 V DC blocking voltage and a continuous forward current of 66 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.27 V at 20 A and 25°C, with a maximum thermal resistance from junction to case of 0.86 °C/W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Low forward voltage drop with positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Procurement Notes
Verify the specific ordering suffix and packing type against official Wolfspeed documentation before procurement. Confirm that the component meets all required RoHS and REACh compliance standards for your region. Ensure the supplier provides valid traceability documents matching the manufacturer's part number and revision history.
Selection Notes
Select this component for applications requiring high efficiency and reduced cooling requirements compared to silicon solutions. Consider the positive temperature coefficient for easy paralleling without thermal runaway concerns. Evaluate the thermal resistance and power dissipation limits relative to the expected operating case temperature.
Part Context
This discrete SiC Schottky diode belongs to the C6D product family, representing the 6th generation of Wolfspeed's silicon carbide technology. It is designed to replace silicon diodes in power rectifier applications, offering lower conduction losses and enabling higher switching frequencies and power densities in diverse electronic systems.
Replacement Considerations
The datasheet notes direct drop-in replacement for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface requirements when substituting legacy components.
