C6D20065D

Diode Arrays Overview

The C6D20065D is a 6th Generation Silicon Carbide Schottky diode in a TO-247-3 package. It features dual internal die configurations with a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 20 A per leg or 40 A per device at 25°C case temperature. The typical forward voltage is 1.27 V at 10 A, while the junction-to-case thermal resistance is 1.3 °C/W per leg. Operating temperatures range from -55°C to +175°C.

Diode Arrays Feature Summary

• Zero reverse recovery charge and forward recovery voltage for high-frequency operation
• Temperature-independent switching behavior enabling parallel device operation without thermal runaway
• Majority carrier technology providing robust performance under harsh conditions

Diode Arrays Applications

• Boost diodes in Power Factor Correction (PFC) stages
• Free wheeling diodes in inverter stages
• Switch mode power supplies
• Solar inverters
• AC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required packing type, as this component is supplied in tubes. Confirm compliance documentation availability for REACh, RoHS, and Halogen-Free requirements prior to finalizing procurement specifications. Ensure the supplier provides the official datasheet revision history to validate the most recent technical parameters.

Diode Arrays Selection Notes

Select this component when designing systems requiring high-frequency switching capabilities and reduced cooling requirements compared to silicon solutions. Evaluate the dual-die configuration to determine if the per-leg or per-device current ratings best suit the thermal management strategy. Consider the low capacitance stored energy for applications demanding minimal switching losses.

Diode Arrays Part Context

This part belongs to Wolfspeed's 6th Generation Silicon Carbide product line, designed to replace traditional silicon diodes in power electronics. It utilizes SiC technology to achieve higher efficiency standards and improved thermal performance. The TO-247-3 package facilitates through-hole mounting for industrial-grade applications.

Diode Arrays Replacement Considerations

Direct drop-in replacements for standard silicon diodes are possible due to similar pinout configurations. Verify that the replacement circuit can handle the specific thermal characteristics and voltage ratings of the SiC device.

Diode Arrays FAQ

Does the C6D20065D exhibit reverse recovery charge?

No, as a majority carrier device, it has zero reverse recovery charge.

What is the maximum junction temperature for this diode?

The maximum operating junction temperature is +175°C.

How is the forward current rated in this dual-die package?

It is rated at 20 A per leg or 40 A per device at a case temperature of 25°C.