C6D20065D1

Overview

The Wolfspeed C6D20065D1 is a 6th generation discrete Silicon Carbide Schottky Barrier diode rated for 650 V DC blocking voltage and 64 A continuous forward current at 25°C case temperature. Housed in a TO-247-3 package, it features a maximum forward voltage of 1.50 V at 20 A and 25°C. The device exhibits zero reverse recovery charge, enabling high-frequency switching with minimal losses. It operates within a junction temperature range of -55°C to +175°C and offers a thermal resistance from junction to case of 0.76 °C/W.

Feature Summary

• Zero reverse recovery current and forward recovery voltage for ultra-fast switching operations
• Low forward voltage drop with a positive temperature coefficient to prevent thermal runaway
• Temperature-independent switching behavior and low leakage current

Applications

• Industrial power supplies
• Battery charging systems
• Switch mode power supplies
• Solar inverters
• Server and telecom power supplies

Procurement Notes

Verify the specific ordering suffix and packing type against official documentation before procurement. Confirm compliance status including RoHS and REACH requirements directly with the manufacturer or authorized distributors. Ensure that the TO-247-3 package dimensions and mounting torque specifications align with your assembly equipment capabilities. Cross-reference the part number with the latest datasheet revision to confirm all electrical parameters remain unchanged.

Selection Notes

Select this component when system efficiency and high-frequency operation are critical. The SiC technology allows for reduced cooling requirements compared to silicon solutions. Verify that the application demands do not exceed the 650 V repetitive peak reverse voltage or the 64 A continuous forward current limits under specified thermal conditions. Consider paralleling multiple units if higher current capacity is required without risk of thermal instability.

Part Context

This device belongs to Wolfspeed's 6th generation family of 650 V Silicon Carbide Schottky diodes. It is designed to replace standard silicon diodes in various power electronics applications. The product line supports diverse packaging options to facilitate flexible system design upgrades across different power ranges.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.