C6D25170H

Overview

The C6D25170H is a 6th Generation 1700 V, 25 A Silicon Carbide Schottky Diode in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 1700 V and a continuous forward current rating of 83 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.45 V at 25 A and 25°C junction temperature, with a maximum thermal resistance from junction to case of 0.4 °C/W. Operating temperatures range from -55°C to +175°C for the junction.

Feature Summary

• Zero reverse recovery charge and forward recovery voltage due to majority carrier operation
• Low forward voltage drop with a positive temperature coefficient
• Temperature-independent switching behavior

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters

Procurement Notes

Verify component authenticity by checking the marking 'C6D25170H' on the TO-247-2 package against official datasheet specifications. Confirm compliance documentation availability for REACh, RoHS, and Halogen-Free requirements through authorized Wolfspeed representatives or product documentation portals prior to integration.

Selection Notes

Select this component for high-voltage applications requiring low conduction loss and fast switching capabilities. Ensure thermal management design accommodates the specified junction-to-case thermal resistance and power dissipation limits across the operating temperature range. Verify that system voltage ratings do not exceed the 1700 V blocking capability under all transient conditions.

Part Context

This discrete silicon carbide Schottky diode belongs to Wolfspeed's 6th Generation portfolio, designed to replace silicon-based solutions in power electronics systems. It enables higher efficiency standards and increased power densities compared to traditional silicon diodes, supporting designs that demand reduced cooling requirements and improved thermal performance.

Replacement Considerations

The datasheet notes direct drop-in replacement potential for current silicon diodes and other silicon carbide diodes. No specific substitute part numbers are documented in the provided source material.