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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 88A TO2472
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：88A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 30 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：45 µA @ 650 V
- Capacitance @ Vr, F：1851pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C6D30065H is a 6th Generation Silicon Carbide Schottky Barrier diode rated for 650 V repetitive peak reverse voltage and 88 A continuous forward current at 25 °C case temperature. It utilizes a TO-247-2 package with a maximum junction-to-case thermal resistance of 0.66 °C/W. The device exhibits a typical forward voltage of 1.35 V at 30 A and 25 °C, alongside a total capacitive charge of 98 nC at 400 V reverse bias.
Feature Summary
- Zero reverse recovery charge and forward recovery voltage due to majority carrier operation
- Low forward voltage drop with a positive temperature coefficient
- Temperature-independent switching behavior
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Procurement Notes
Verify the specific revision status against the latest Wolfspeed datasheet before finalizing designs. Confirm that the TO-247-2 mounting torque requirements are met during assembly. Ensure compliance documentation such as RoHS and REACh declarations align with target market regulations. Check for any recent updates to the part marking or ordering information.
Selection Notes
Select this component when high-frequency operation and reduced cooling requirements are necessary. The SiC technology allows for easier paralleling without thermal runaway concerns compared to silicon alternatives. Evaluate the thermal performance based on the specified junction-to-case resistance values for your specific duty cycle conditions.
Part Context
This discrete power diode belongs to Wolfspeed's 6th Generation Silicon Carbide product line. It is designed to replace standard silicon diodes in applications demanding higher efficiency and power density. The device supports diverse power electronics systems by enabling higher operating frequencies while maintaining robust thermal performance.
Replacement Considerations
The datasheet notes direct drop-in replacement capabilities for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface material application methods when substituting legacy components.
FAQ
Does the C6D30065H exhibit reverse recovery charge?
No, as a Silicon Carbide Schottky diode utilizing majority carrier devices, it has zero reverse recovery charge.
What is the maximum junction temperature rating?
The maximum junction temperature (Tj) is rated up to +175 °C.
