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The Wolfspeed C6D40065H is a discrete Silicon Carbide (SiC) Schottky diode designed for industrial applications. It features a 650 V blocking voltage and an average forward current rating of 40 A. The device utilizes a TO-220-3 package with through-hole mounting. Key electrical parameters include a maximum reverse leakage current of 10 µA at rated voltage and a typical forward voltage drop of 1.7 V at 40 A. It operates within a junction temperature range of -55°C to +175°C, offering high thermal stability and low conduction losses compared to silicon alternatives.
Verify the specific suffix code on the datasheet to confirm pinout configuration and packaging variations. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the RoHS and REACH compliance declarations with current regulatory requirements before finalizing orders.
Select this component when system design requires a 650 V SiC rectifier with a 40 A continuous current rating in a TO-220-3 form factor. Evaluate thermal management solutions to maintain junction temperatures below 175°C under peak load conditions. Compare total system efficiency gains against silicon counterparts to justify the material choice based on switching frequency requirements.
This part belongs to Wolfspeed's discrete Silicon Carbide Schottky diode portfolio, specifically engineered for power conversion systems. It represents an advancement over traditional silicon diodes by reducing switching losses and improving overall power density. The product line targets demanding industrial environments requiring high reliability and thermal performance.
Direct replacements must match the 650 V rating, 40 A current capacity, and TO-220-3 package. Verify that substitute components offer comparable reverse leakage characteristics and forward voltage drops to ensure circuit compatibility without redesigning thermal or drive circuits.