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Product Detailed Parameters
- Description：DIODE ARR SIC 650V 21A TO220-3L
- Series：-
- Mfr：Bruckewell
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：21A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：25 µA @ 650 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3L
- Grade：-
- Qualification：-
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Overview
The CBR20P65PC is a Silicon Carbide Schottky diode rated for 650 V maximum repetitive reverse voltage and 212 A maximum average forward rectified current at a case temperature of 25°C. It features an extremely fast switching speed that remains independent of temperature, with no reverse or forward recovery characteristics. The device supports a maximum operating junction temperature of 175°C and includes avalanche rating capability. Packaged in TO-220-3L, it offers enhanced surge capability and a positive temperature coefficient to facilitate safe operation and ease of paralleling.
Feature Summary
- Positive temperature coefficient ensures safe operation and simplifies paralleling
- Extremely fast switching behavior that is independent of temperature
- No reverse or forward recovery during operation
- Enhanced surge capability for robust transient performance
Applications
- High frequency rectifier of switching mode power supplies
- Freewheeling diodes
- DC-to-DC converters
- Industrial motor drives
- Power factor correction modules
Procurement Notes
Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A -2021. Confirm the package type is TO-220-3L and check RoHS compliance status. Ensure the specific electrical parameters match your thermal management requirements, particularly regarding the 175°C maximum junction temperature and avalanche energy ratings.
Selection Notes
Select this component for applications requiring high-frequency rectification and minimal switching losses. The silicon carbide substrate provides superior thermal performance compared to silicon alternatives. Consider the positive temperature coefficient when designing circuits that require parallel configurations to ensure balanced current sharing without complex control loops.
Part Context
This part belongs to the Bruckewell SiC Schottky Diode series, designed for high-efficiency power electronics. It utilizes a wide bandgap material to achieve low forward voltage and negligible reverse recovery charge. The device is intended to replace traditional silicon diodes in demanding environments where high temperature stability and fast switching are critical.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
Is the switching speed of the CBR20P65PC dependent on temperature?
No, the datasheet specifies that the switching speed is extremely fast and temperature-independent.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the CBR20P65PC exhibit reverse recovery?
No, the device has no reverse or forward recovery characteristics due to its Schottky construction.
