CBS10S30,L3F

$0.31

Description：DIODE SCHOTTKY 20V 1A CST2B
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:60d8d2c9d9e6 Category: Single Diodes Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：DIODE SCHOTTKY 20V 1A CST2B
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：20 V
Current - Average Rectified (Io)：1A
Voltage - Forward (Vf) (Max) @ If：450 mV @ 1 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：500 µA @ 30 V
Capacitance @ Vr, F：135pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：2-SMD, No Lead
Supplier Device Package：CST2B
Operating Temperature - Junction：125°C (Max)
Grade：-
Qualification：-

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CBS10S30,L3F

Overview

The CBS10S30 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a peak reverse voltage of 30 V and an average rectified current rating of 1.0 A. The device operates within a junction temperature range of -55 °C to 125 °C. Electrical characteristics include a typical forward voltage of 0.23 V at 0.1 A, 0.32 V at 0.5 A, and 0.39 V at 1.0 A. Reverse leakage current is typically 0.15 mA at 30 V, with a total capacitance of 135 pF at 1 MHz. The component is housed in the CST2B package.

Feature Summary

Designed for high-speed switching applications
Utilizes silicon epitaxial construction for Schottky barrier performance
Features low forward voltage drop characteristics

Applications

High-speed switching circuits

Procurement Notes

Verify the specific part number CBS10S30,L3F against official Toshiba documentation to ensure compatibility with design requirements. Confirm that the CST2B package dimensions align with the intended PCB land pattern. Review the absolute maximum ratings and derating guidelines provided in the reliability handbook before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring fast switching speeds and moderate current handling capabilities. Consider the thermal implications of reverse leakage current, as Schottky barriers are susceptible to thermal runaway under high-temperature conditions. Ensure adequate heat dissipation is designed into the system to maintain reliability within the specified junction temperature limits.

Part Context

This component belongs to Toshiba's lineup of small signal Schottky barrier diodes. These devices are engineered to provide efficient rectification and protection in compact surface-mount configurations. The CBS series specifically targets applications where low forward voltage and rapid recovery times are critical for maintaining circuit efficiency and signal integrity.