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The CBS10S40,L3F is a single Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a maximum repetitive reverse voltage of 40 V and a forward current rating of 1 A. The device exhibits a maximum forward voltage of 550 mV at 1 A and a reverse leakage current of 200 uA. It operates within a junction temperature range up to +125 °C and supports a forward surge current of 5 A. The component is housed in the CST2B surface-mount package.
Verify the specific suffix L3F against the official Toshiba datasheet to confirm pinout and marking consistency. Confirm RoHS compliance status through the manufacturer's latest documentation. Check lifecycle status as some sources indicate potential discontinuation or stock depletion. Ensure the CST2B footprint matches the target PCB layout requirements before finalizing procurement decisions.
Select this component for applications requiring a 40 V reverse voltage rating and 1 A continuous forward current capability. The low forward voltage makes it suitable for improving efficiency in low-voltage DC systems. Consider the CST2B package dimensions for space-constrained designs. Evaluate thermal management needs based on the specified maximum operating temperature of +125 °C.
This part belongs to Toshiba's discrete Schottky diode lineup, designed for efficient power conversion. The CBS series typically targets compact consumer electronics and industrial control systems where small form factors and reliable switching performance are required. It complements other Toshiba rectifiers offering similar voltage and current ratings in different packages.
Cross-reference with CBS10S30,L3F for lower voltage (20 V) requirements. Verify compatibility with CUS15S40,H3F for higher current (1.5 A) needs. Ensure substitute parts match the CST2B package and electrical specifications exactly.