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Product Detailed Parameters
- Description：SiC MOSFET 33A 1200V TO-247-3
- Series：-
- Mfr：CoolCAD
- Package：Bulk
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：33A
- Drive Voltage (Max Rds On, Min Rds On)：15V, 20V
- Rds On (Max) @ Id, Vgs：70mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id：2.9V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 18 V
- Vgs (Max)：+20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：930 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：135W
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The CoolCAD CC-CL-75-1023 is a Gen-II Silicon Carbide (SiC) Power MOSFET with an integrated body diode, housed in a TO-247-3 package. It features a maximum DC blocking voltage of 1200 V and a continuous drain current of 33 A at 25°C. The device exhibits a typical on-resistance of 60 mΩ at 25°C and 125 mΩ at 175°C. Key switching parameters include a turn-on energy of 595 µJ and a reverse recovery charge of 123 nC for the body diode.
Feature Summary
- Fabricated using high-quality SiC epitaxial layers with proprietary annealing procedures to ensure a high-quality gate oxide dielectric layer.
- Optimized doping profile, neck region, and edge termination design to achieve extremely low on-resistance while maintaining high breakdown voltage capabilities.
- Integrated body diode designed for efficient third-quadrant operation with specific reverse recovery characteristics suitable for hard-switching applications.
Applications
- Electromechanical power converters
- DC to DC, AC to DC, and DC to AC converters
- Switching power supplies
- Electric vehicles and hybrid vehicles
- Solar and wind energy power converters
Procurement Notes
Verify component authenticity through official CoolCAD Electronics channels or authorized distributors. Confirm that the received part matches the marking CC-CL-75-1023 on the TO-247-3 package. Ensure handling procedures account for ESD sensitivity as specified in the datasheet. Review the latest revision status before integration into final designs.
Selection Notes
Select this component for high-efficiency power conversion systems requiring 1200V blocking capability. Consider the thermal resistance of 1.1 °C/W when designing heatsinking solutions. Evaluate the gate charge requirements against driver capabilities to optimize switching speeds. Assess system voltage levels against the 800V test conditions for switching energy data.
Part Context
This device belongs to the CoolCAD Gen-II MOSFET series, which utilizes Silicon Carbide technology to exceed standard silicon performance limits. The series offers various breakdown voltages including 650V, 1200V, 1700V, and 3300V options. The TO-247-3 package provides a robust mechanical interface for high-power industrial and automotive applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching 1200V rating, TO-247-3 package, and comparable RDS(on) and Qrr specifications from other manufacturers.
