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The CCS15F40 is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It features a maximum repetitive reverse voltage of 40 V and an average rectified forward current rating of 1.5 A. The device exhibits low reverse leakage current, typically 8 µA at 40 V, and maintains a low forward voltage drop of up to 0.64 V at 1.5 A. Packaged in the compact CST2C surface-mount format, it supports a junction temperature range from -55°C to 150°C with a power dissipation capacity of 900 mW.
Verify component authenticity by checking the marking code against official Toshiba Semiconductor documentation. Ensure compliance with environmental directives such as RoHS before integration. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines and thermal management requirements to maintain operational safety under varying load conditions.
Select this component when designing circuits requiring fast recovery characteristics and low conduction losses. Evaluate thermal performance carefully due to the inherent reverse leakage properties of Schottky barriers. Confirm that the operating voltage and current limits remain within the specified absolute maximum ratings to prevent reliability degradation.
This device belongs to the Toshiba Schottky Barrier Diode family, utilizing silicon epitaxial technology. It is engineered to provide efficient rectification in compact form factors. The CST2C package allows for dense board assembly while maintaining electrical isolation between the cathode and anode terminals.
Consult official Toshiba documentation for verified substitute part numbers. Do not assume functional equivalence with generic Schottky diodes without verifying pinout compatibility and electrical parameter alignment.
The typical reverse leakage current is 8 µA when measured at a reverse voltage of 40 V.
The forward voltage increases with current, ranging from a typical 0.40 V at 500 mA to 0.59 V at 1.5 A.