CCS15F40,L3F

CCS15F40,L3F

$0.23
  • Description:DIODE SCHOTTKY 40V 1.5A CST2C
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9704cc01f927 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 40V 1.5A CST2C
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:640 mV @ 1.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 40 V
  • Capacitance @ Vr, F:130pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:2-SMD, No Lead
  • Supplier Device Package:CST2C
  • Operating Temperature - Junction:150°C (Max)
  • Grade:-
  • Qualification:-

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CCS15F40,L3F

Overview

The CCS15F40 is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It features a maximum repetitive reverse voltage of 40 V and an average rectified forward current rating of 1.5 A. The device exhibits low reverse leakage current, typically 8 µA at 40 V, and maintains a low forward voltage drop of up to 0.64 V at 1.5 A. Packaged in the compact CST2C surface-mount format, it supports a junction temperature range from -55°C to 150°C with a power dissipation capacity of 900 mW.

Feature Summary

  • High average rectified current capability
  • Low reverse leakage current
  • Suitable for high-speed switching

Applications

  • High-speed switching circuits

Procurement Notes

Verify component authenticity by checking the marking code against official Toshiba Semiconductor documentation. Ensure compliance with environmental directives such as RoHS before integration. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines and thermal management requirements to maintain operational safety under varying load conditions.

Selection Notes

Select this component when designing circuits requiring fast recovery characteristics and low conduction losses. Evaluate thermal performance carefully due to the inherent reverse leakage properties of Schottky barriers. Confirm that the operating voltage and current limits remain within the specified absolute maximum ratings to prevent reliability degradation.

Part Context

This device belongs to the Toshiba Schottky Barrier Diode family, utilizing silicon epitaxial technology. It is engineered to provide efficient rectification in compact form factors. The CST2C package allows for dense board assembly while maintaining electrical isolation between the cathode and anode terminals.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume functional equivalence with generic Schottky diodes without verifying pinout compatibility and electrical parameter alignment.

FAQ

What is the typical reverse leakage current at maximum rated voltage?

The typical reverse leakage current is 8 µA when measured at a reverse voltage of 40 V.

How does the forward voltage vary with current?

The forward voltage increases with current, ranging from a typical 0.40 V at 500 mA to 0.59 V at 1.5 A.

CCS15F40,L3FCCS15F40,L3F
$0.23
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