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The CCS15S30 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a CST2C package with pin configurations for cathode and anode. Key electrical parameters include a peak reverse voltage of 30 V, a maximum reverse voltage of 20 V, and an average rectified current rating of 1.5 A. The device supports a non-repetitive peak forward surge current of 5 A. Forward voltage characteristics are specified at 0.40 V maximum for a 1 A pulse test and 0.39 V maximum for a 1.5 A pulse test. Reverse leakage current is limited to 0.5 mA maximum at 30 V. Total capacitance is typically 200 pF at 0 V reverse bias and 1 MHz frequency. Operating junction temperature ranges up to 125 °C.
Verify the specific ordering suffix L3F against official Toshiba documentation to confirm packaging details and marking codes. Ensure compliance with RoHS directives and export regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain product integrity during storage and assembly processes.
Select this component for applications requiring low forward voltage drop and fast switching speeds. Consider thermal management strategies due to potential thermal runaway risks associated with Schottky barrier diodes under high-temperature conditions. Evaluate absolute maximum ratings carefully to ensure operation within safe limits for reverse voltage and forward current in the target design environment.
This discrete semiconductor component belongs to the single diode category within Toshiba's portfolio. Commercial production commenced in July 2013. The device utilizes silicon epitaxial technology to achieve its specified performance metrics. It is designed for surface mount applications using the CST2C package format, which facilitates integration into compact electronic systems requiring reliable rectification or switching functions.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives for alternative components that meet similar electrical specifications and package requirements if direct substitution is necessary.
The typical forward voltage (VF(1)) is 0.33 V when tested with a 1 A pulse current.
The reverse current (IR) is typically 0.2 mA and has a maximum limit of 0.5 mA at a reverse voltage of 30 V under pulse test conditions.