CCS15S30,L3F

CCS15S30,L3F

$0.34
  • Description:DIODE SCHOTTKY 20V 1.5A CST2C
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c102ea044539 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 20V 1.5A CST2C
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):20 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:400 mV @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 30 V
  • Capacitance @ Vr, F:200pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:2-SMD, No Lead
  • Supplier Device Package:CST2C
  • Operating Temperature - Junction:125°C (Max)
  • Grade:-
  • Qualification:-

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CCS15S30,L3F

Overview

The CCS15S30 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a CST2C package with pin configurations for cathode and anode. Key electrical parameters include a peak reverse voltage of 30 V, a maximum reverse voltage of 20 V, and an average rectified current rating of 1.5 A. The device supports a non-repetitive peak forward surge current of 5 A. Forward voltage characteristics are specified at 0.40 V maximum for a 1 A pulse test and 0.39 V maximum for a 1.5 A pulse test. Reverse leakage current is limited to 0.5 mA maximum at 30 V. Total capacitance is typically 200 pF at 0 V reverse bias and 1 MHz frequency. Operating junction temperature ranges up to 125 °C.

Feature Summary

  • Low forward voltage characteristic for efficient power conversion
  • High-speed switching capability suitable for rapid circuit operations

Applications

  • High-speed switching circuits

Procurement Notes

Verify the specific ordering suffix L3F against official Toshiba documentation to confirm packaging details and marking codes. Ensure compliance with RoHS directives and export regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain product integrity during storage and assembly processes.

Selection Notes

Select this component for applications requiring low forward voltage drop and fast switching speeds. Consider thermal management strategies due to potential thermal runaway risks associated with Schottky barrier diodes under high-temperature conditions. Evaluate absolute maximum ratings carefully to ensure operation within safe limits for reverse voltage and forward current in the target design environment.

Part Context

This discrete semiconductor component belongs to the single diode category within Toshiba's portfolio. Commercial production commenced in July 2013. The device utilizes silicon epitaxial technology to achieve its specified performance metrics. It is designed for surface mount applications using the CST2C package format, which facilitates integration into compact electronic systems requiring reliable rectification or switching functions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives for alternative components that meet similar electrical specifications and package requirements if direct substitution is necessary.

FAQ

What is the typical forward voltage of the CCS15S30?

The typical forward voltage (VF(1)) is 0.33 V when tested with a 1 A pulse current.

How does the CCS15S30 handle reverse leakage current?

The reverse current (IR) is typically 0.2 mA and has a maximum limit of 0.5 mA at a reverse voltage of 30 V under pulse test conditions.

CCS15S30,L3FCCS15S30,L3F
$0.34
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