CCSPG1060N TR PBFREE

$4.72

Description：100V, 60A, N-CHANNEL CHIP SCALE
Series：*
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3062ebb19377 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：100V, 60A, N-CHANNEL CHIP SCALE
Series：*
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-CSP (3.5x2.13)
Package / Case：8-XFLGA, CSP

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CCSPG1060N TR PBFREE

Overview

The CCSPG1060N is an N-channel gallium nitride field effect transistor rated for 100 V drain-source voltage and 60 A continuous drain current. It features a maximum on-resistance of 5.5 mΩ at VGS=5.0 V and ID=25 A, with a gate charge of 9.2 nC. The device operates within a junction temperature range of -40 to +150 °C and utilizes a CSP3.5X2 package.

Feature Summary

Utilizes gallium nitride technology for high-efficiency power switching
Designed for EV charging stations, microinverters, and fast-charging power blocks
Features low gate charge and on-resistance for reduced switching losses

Applications

EV charging stations
Microinverters
Highly efficient fast-charging power blocks

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE designation indicates lead-free compliance. Confirm package type and thermal characteristics match design requirements before procurement.

Selection Notes

Select this component for applications requiring high current handling in compact form factors. Ensure gate drive voltages remain within the specified -4.0 to +6.0 V range. Consider thermal management solutions given the power dissipation ratings under different mounting conditions.

Part Context

This part belongs to Central Semiconductor's gallium nitride FET lineup. It is designed to replace traditional silicon MOSFETs in high-frequency, high-efficiency power conversion circuits where size and thermal performance are critical constraints.