CCSPG1510N TR PBFREE

$7.82

Description：SURFACE MOUNT MOSFET
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e12a41c9b759 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SURFACE MOUNT MOSFET
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.1V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：25-CSP (4x6)
Package / Case：25-PowerVFQFN

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CCSPG1510N TR PBFREE

Overview

The CCSPG1510N TR PBFREE is a surface-mount Gallium Nitride (GaN) N-channel power FET from Central Semiconductor Corp. It features a CSP4X6 package and supports a drain-source voltage of 150 V with a continuous drain current of 100 A. The device exhibits a typical on-resistance of 3.2 mΩ at VGS=5.0V and ID=30A, with a gate charge of 20 nC. Operating temperatures range from -40°C to +150°C.

Feature Summary

Designed for high-efficiency applications including EV charging stations, microinverters, and fast-charging power blocks.
Features low on-resistance and high continuous drain current capability within a compact surface-mount footprint.

Applications

EV charging stations
Microinverters
Highly efficient fast-charging power blocks

Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs. The 'TR' designation indicates tape and reel packaging, while 'PBFREE' confirms lead-free plating compliance. Confirm that the CSP4X6 mechanical outline matches your PCB pad geometry requirements before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high current handling up to 100 A and low conduction losses in a small form factor. Ensure the gate drive circuitry accommodates the specified VGS limits (-4.0 V to 6.0 V) and accounts for the total gate charge of 20 nC for optimal switching performance.

Part Context

This part belongs to Central Semiconductor's GaN N-channel power FET family, which includes variants such as the CCSPG1560N. These devices are engineered to replace traditional silicon MOSFETs in applications demanding superior efficiency and faster switching speeds.