CCSPG1560N TR PBFREE

Overview

The CCSPG1560N is a surface-mount N-channel gallium nitride (GaN) power field-effect transistor manufactured by Central Semiconductor Corp. It features a CSP4X6 package and supports a drain-source voltage of 150 V with a continuous drain current of 60 A. The device exhibits a maximum on-resistance of 7 mΩ at VGS=5.0V and ID=20A, alongside a gate charge of 13 nC. Operating temperatures range from -40°C to +150°C.

Feature Summary

• Utilizes gallium nitride technology for high-speed switching applications
• Designed for EV charging stations and microinverters
• Features a compact CSP4X6 surface-mount case

Applications

• EV charging stations
• Microinverters
• Highly efficient fast-charging power blocks

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating compliance. Requesting tin/lead plated devices requires adding the 'TIN/LEAD' suffix to the part number. Confirm package details and environmental compliance documentation directly with the manufacturer or authorized distributors before finalizing procurement.

Selection Notes

Select this component for designs requiring low conduction losses and high efficiency in power conversion systems. Ensure the driving circuitry accommodates the specified gate-source voltage limits of -4.0 V to +6.0 V. Verify thermal management strategies align with the 0.2 W power dissipation rating at 25°C ambient temperature.

Part Context

This component belongs to Central Semiconductor's lineup of GaN FETs designed for high-efficiency power applications. It serves as an alternative to traditional silicon-based MOSFETs where faster switching speeds and reduced heat generation are critical requirements for modern power electronics architectures.

Replacement Considerations

No publicly confirmed substitute part numbers are documented in the provided source material.